Dry Etch Plasma Chambers

Dry etching is an essential nanofabrication technique in the modern-day manufacturing of miniaturized semiconductor devices. The semiconductors undergo physical bombardment by argon ions in dry-etch chambers for selectively removing masked patterns of semiconductor materials. The atmosphere in dry-etch chambers is highly corrosive and involves halogen-containing gases such as fluorine and chlorine that get broken down by plasma into chemically reactive radicals. The process gases and the removed material pose a potential risk of deposition onto the chamber components such as walls, liners, and process kits.

Dry etching is an essential nanofabrication technique in the modern-day manufacturing of miniaturized semiconductor devices. The semiconductors undergo physical bombardment by argon ions in dry-etch chambers for selectively removing masked patterns of semiconductor materials. The atmosphere in dry-etch chambers is highly corrosive and involves halogen-containing gases such as fluorine and chlorine that get broken down by plasma into chemically reactive radicals. The process gases and the removed material pose a potential risk of deposition onto the chamber components such as walls, liners, and process kits.

To meet these challenges, the etch chambers require internal wear and corrosion-resistant coatings to protect them from the corrosive gases that could otherwise prove detrimental to plasma chamber components and their performance.

Saint-Gobain Coating Solutions offers a variety of ceramic thermal spray powder for all plasma-facing components in a dry etch chamber.